Cree Inc., an innovator of lighting class LEDs, power and radio frequency (RF) semiconductors, and lighting products, has announced plans to spend as much as $1bn to increase its silicon carbide capacity.
The CEO of Cree, Gregg Lowe, in announcing the company’s expansion, said it was Cree’s largest-ever investment to radically increase the supply of silicon carbide, for which the demand has outstripped the available supply. Cree’s plan delivers additional capacity for its Wolfspeed silicon carbide trade.
The company’s plan is to build out from the existing structure, thereby creating a 253,000 square-foot facility for RF and 200mm wafer fabrication. Once completed in 2024, the enlarged facility will significantly increase the company’s wafer fabrication and silicon carbide materials capability.
Cree Inc. plans to adapt its existing fabrication and materials facility in Durham to a materials mega factory. The design of the new North Fab will be fully automotive qualified, supplying almost 18 times more than the existing manufacturing surface area. In the beginning, the company will focus on making 150mm wafers.
As the property will not change hands, there will be no need to change Letterheads or develop a new Logo Design at this stage. However, Cree believes it will be making the biggest capital investment in silicon carbide history. Moreover, by installing mostly refurbished tools in existing facilities, the company thinks it can create a state-of-the-art 200mm capable fab for about one-third of what a new fab would cost.
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